JPH0138385B2 - - Google Patents

Info

Publication number
JPH0138385B2
JPH0138385B2 JP57076455A JP7645582A JPH0138385B2 JP H0138385 B2 JPH0138385 B2 JP H0138385B2 JP 57076455 A JP57076455 A JP 57076455A JP 7645582 A JP7645582 A JP 7645582A JP H0138385 B2 JPH0138385 B2 JP H0138385B2
Authority
JP
Japan
Prior art keywords
emitter
control terminal
mis structure
gate
common control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57076455A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57194579A (en
Inventor
Patarongu Waaberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS57194579A publication Critical patent/JPS57194579A/ja
Publication of JPH0138385B2 publication Critical patent/JPH0138385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP57076455A 1981-05-08 1982-05-07 Thyristor Granted JPS57194579A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118293 DE3118293A1 (de) 1981-05-08 1981-05-08 Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS57194579A JPS57194579A (en) 1982-11-30
JPH0138385B2 true JPH0138385B2 (en]) 1989-08-14

Family

ID=6131809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57076455A Granted JPS57194579A (en) 1981-05-08 1982-05-07 Thyristor

Country Status (4)

Country Link
US (1) US4466010A (en])
EP (1) EP0064717B1 (en])
JP (1) JPS57194579A (en])
DE (1) DE3118293A1 (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
EP0280536B1 (en) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Turn-on driving technique for insulated gate thyristor
JPH0612817B2 (ja) * 1989-12-27 1994-02-16 株式会社東芝 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en]) * 1962-06-11
JPS5629458B2 (en]) * 1973-07-02 1981-07-08
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2855794A1 (de) * 1978-12-22 1980-07-10 Siemens Ag Audiometer
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper

Also Published As

Publication number Publication date
EP0064717A2 (de) 1982-11-17
DE3118293C2 (en]) 1991-07-18
US4466010A (en) 1984-08-14
DE3118293A1 (de) 1982-12-02
JPS57194579A (en) 1982-11-30
EP0064717A3 (en) 1983-10-12
EP0064717B1 (de) 1987-08-26

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